activity
20182021
most citedHigh-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

208 citations · 290 across the 4 of their papers we have counts for

collaborators

10 papers

physics.optics20211 cited

Enhanced optical nonlinearities in epitaxial quantum dots lasers on silicon for future photonic integrated systems

Jianan Duan, Weng W. Chow, Bozhang Dong +5

Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include p…

cond-mat.mes-hall202015 cited

Attractive and repulsive dipolar interaction in bilayers of indirect excitons

Darius Choksy, Chao Xu, Michael Fogler +3

We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lea…

quant-ph2020

Artificial coherent states of light by multi-photon interference in a single-photon stream

P. Steindl, H. Snijders, G. Westra +9

Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can b…

quant-ph2020

Ultra-bright entangled-photon pair generation from an AlGaAs-on-insulator microring resonator

Trevor J. Steiner, Joshua E. Castro, Lin Chang +5

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, i…

physics.app-ph202066 cited

Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon

Jennifer Selvidge, Justin Norman, Eamonn T. Hughes +7

Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit perform…

physics.optics2020

Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics

Weiqiang Xie, Lin Chang, Haowen Shu +4

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refract…