593 citations · 659 across the 5 of their papers we have counts for
5 papers
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric -based Capacitors Through Operando Nanobeam X-ray Diffraction
Evgenios Stylianidis, Pranav Surabhi, Ruben Hamming-Green +13
Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, th…
Ferroelastic domain walls in BiFeO as memristive networks
Jan Rieck, Davide Cipollini, Mart Salverda +3
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate region…
Electrical and acoustic self-oscillations in an epitaxial oxide for neuromorphic applications
M. Salverda, B. Noheda
Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials res…
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…
A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Yingfen Wei, Pavan Nukala, Mart Salverda +10
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appea…