307 citations · 1.6k across the 22 of their papers we have counts for
8 papers · 1 filter
A substitutional quantum defect in WS discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
John C. Thomas, Wei Chen, Yihuang Xiong +21
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high…
Direct visualization of the charge transfer in Graphene/-RuCl heterostructure
Antonio Rossi, Riccardo Dettori, Cameron Johnson +13
We investigate the electronic properties of a graphene and -ruthenium trichloride (hereafter RuCl) heterostructure, using a combination of experimental and theoretical techn…
Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure
Antonio Rossi, Jonas Zipfel, Indrajit Maity +13
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from…
Graphene-driven correlated electronic states in one dimensional defects within WS
Antonio Rossi, John C. Thomas, Johannes T. Küchle +19
Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Re…
Autonomous Investigations over WS and Au{111} with Scanning Probe Microscopy
John C. Thomas, Antonio Rossi, Darian Smalley +14
Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling sp…
Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS
Katherine A. Cochrane, Jun-Ho Lee, Christoph Kastl +9
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichal…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…