150 citations · 173 across the 7 of their papers we have counts for
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A substitutional quantum defect in WS discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
John C. Thomas, Wei Chen, Yihuang Xiong +21
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high…
Exciton self-trapping causes picoseconds recombination in metal-organic chalcogenides hybrid quantum wells
Christoph Kastl, Adam M. Schwartzberg, Lorenzo Maserati
Metal-organic species can be designed to self-assemble in large-scale, atomically defined, supramolecular architectures. Hybrid quantum wells, where inorganic two-dimensional (2D)…
Coupled Valence Carrier and Core-Exciton Dynamics in WS Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy
Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen +7
Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously p…
Vibrational relaxation dynamics in layered perovskite quantum wells
Li Na Quan, Yoonjae Park, Peijun Guo +8
Organic-inorganic layered perovskites are two-dimensional quantum wells with layers of lead-halide octahedra stacked between organic ligand barriers. The combination of their diele…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…