activity
20182022
most citedIdentifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

307 citations · 791 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

4 papers · 1 filter

cond-mat.mtrl-sci2022★ 12 cited

Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy

Juwon Oh, Hung-Tzu Chang, Christopher T. Chen +3

Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-…

cond-mat.mtrl-sci2021★ 28 cited

Coupled Valence Carrier and Core-Exciton Dynamics in WS Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy

Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen +7

Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously p…

cond-mat.mtrl-sci2018★ 307 cited

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17

Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…

cond-mat.mtrl-sci2018★ 214 cited

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2

Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10

Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…