activity
20182022
most citedIdentifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

307 citations · 791 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2022★ 12 cited

Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy

Juwon Oh, Hung-Tzu Chang, Christopher T. Chen +3

Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-…

cond-mat.mtrl-sci2021★ 28 cited

Coupled Valence Carrier and Core-Exciton Dynamics in WS Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy

Hung-Tzu Chang, Alexander Guggenmos, Christopher T. Chen +7

Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously p…

cond-mat.mes-hall2020★ 150 cited

How Substitutional Point Defects in Two-Dimensional WS Induce Charge Localization, Spin-Orbit Splitting, and Strain

Bruno Schuler, Jun-Ho Lee, Christoph Kastl +13

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semicond…

cond-mat.mes-hall2020

Characterizing Transition-Metal Dichalcogenide Thin-Films using Hyperspectral Imaging and Machine Learning

Brian Shevitski, Christopher T. Chen, Christoph Kastl +4

Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely dif…

cond-mat.mes-hall2019★ 80 cited

Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride

Brian Shevitski, S. Matt Gilbert, Christopher T. Chen +8

Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color c…

cond-mat.mtrl-sci2018★ 307 cited

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17

Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…