307 citations · 1.8k across the 30 of their papers we have counts for
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Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin
Moritz Fischer, Ali Sajid, Jake Iles-Smith +10
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the mi…
Exciton self-trapping causes picoseconds recombination in metal-organic chalcogenides hybrid quantum wells
Christoph Kastl, Adam M. Schwartzberg, Lorenzo Maserati
Metal-organic species can be designed to self-assemble in large-scale, atomically defined, supramolecular architectures. Hybrid quantum wells, where inorganic two-dimensional (2D)…
Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS
Katherine A. Cochrane, Jun-Ho Lee, Christoph Kastl +9
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichal…
Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature
Paul Seifert, Florian Sigger, Jonas Kiemle +5
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bi…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…