Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature
arXiv:1810.01510 · doi:10.1103/PhysRevB.99.161403
Abstract
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.
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- Light-induced anomalous Hall effect in graphene
- Non-linear Nernst effect in bilayer WTe
- Photo-Induced Anomalous Hall Effect in Two-Dimensional Transition-Metal Dichalcogenides
- Light-induced bound electron states in two-dimensional systems: Contribution to electron transport
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- Photovoltaic Hall effect in two-dimensional electron gas: Kinetic theory