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physics.app-ph2021★ 1 cited
High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz
Peng Cui, Hang Chen, John Q. Xiao +1
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and o…
physics.app-ph2020
Sub-60 mV/decade switching via high energy electrons tunneling in nanoscale gallium nitride field-effect transistors
Peng Cui, Guangyang Lin, Jie Zhang +1
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switc…
physics.app-ph2020★ 3 cited
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
Peng Cui, Meng Jia, Guangyang Lin +3
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC)…