3 citations · 3 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020
Sub-60 mV/decade switching via high energy electrons tunneling in nanoscale gallium nitride field-effect transistors
Peng Cui, Guangyang Lin, Jie Zhang +1
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switc…
physics.app-ph2020★ 3 cited
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
Peng Cui, Meng Jia, Guangyang Lin +3
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC)…