activity
20012018
most citedBand structure model of magnetic coupling in semiconductors

142 citations · 333 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2018★ 21 cited

A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone

Carlos Mera Acosta, Matheus P. Lima, Antonio J. R. da Silva +2

We put forward a tight-binding model for rhombohedral topological insulators materials with the space group . The model describes the bulk band structure of…

cond-mat.mtrl-sci2008

Edge effects in Bilayer Graphene Nanoribbons

Matheus P. Lima, A. Fazzio, Antônio J. R. da Silva

We show that the ground state of zigzag bilayer graphene nanoribbons is non-magnetic. It also possesses a finite gap, which has a non-monotonic dependence with the width as a conse…

cond-mat.other2007★ 2 cited

Theoretical study of N-complexes in carbon nanotubes

Mariana Rossi, Adalberto Fazzio, Antonio J. R. da Silva

We have made a systematic theoretical study to determine which are the most stable structures for substitutional nitrogen defects in carbon nanotubes, by making total energy calcul…

cond-mat.mtrl-sci2005★ 13 cited

Disorder and the effective Mn-Mn exchange interaction in GaMnAs diluted magnetic semiconductors

Antonio J. R. da Silva, A. Fazzio, Raimundo R. dos Santos +1

We perform a theoretical study, using {\it ab initio} total energy density-functional calculations, of the effects of disorder on the exchange interactions for $Ga_{1-x}Mn_…

cond-mat.mtrl-sci2005★ 142 cited

Band structure model of magnetic coupling in semiconductors

Gustavo M. Dalpian, Su-Huai Wei, X. G. Gong +2

We present a unified band structure model to explain magnetic ordering in Mn-doped semiconductors. This model is based on the - and - level repulsions between the Mn io…

cond-mat.mtrl-sci2003★ 21 cited

Diffusion-reaction mechanisms of nitriding species in SiO2

W. Orellana, Antonio J. R. da Silva, A. Fazzio

We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO2. We consider NO, NH, N2 and atomic N in differen…