44 citations · 44 across the 3 of their papers we have counts for
3 papers
Hf defects in HfO2/Si
W. L. Scopel, Antonio J. R. da Silva, A. Fazzio
We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theor…
Orientational Defects in Ice Ih: An Interpretation of Electrical Conductivity Measurements
Maurice de Koning, Alex Antonelli, Antonio J. R. da Silva +1
We present a first-principles study of the structure and energetics of Bjerrum defects in ice Ih and compare the results to experimental electrical conductivity data. While the DFT…
A possible route to grow a (Mn:Si(1-x)Gex)-based diluted magnetic semiconductor
Antonio J. R. da Silva, A. Fazzio, A. Antonelli
We systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si(…