activity
20162020
most citedModeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

23 citations · 33 across the 5 of their papers we have counts for

collaborators
Showing 2016Show all

1 paper · 1 filter

cond-mat.mes-hall2016

N-P-N Bipolar Action in Junctionless Nanowire TFET: Physical Operation of a Modified Current Mechanism for Low Power Applications

Morteza Rahimiana, Morteza Fathipour

In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In…