activity
20162020
most citedModeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

23 citations · 33 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2020

Effect of electrolyte concentration and symmetry on the heterogeneous surface charge in an electrically gated nanochannel

Movaffaq Kateb, Morteza Fathipour, Mohammadreza Kolahdouz

The present study aims to investigate utilizing field-effect for inducing heterogeneous surface charge and consequently changing the fluid flow in a solid-state nanochannel with co…

physics.app-ph2020

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…

physics.app-ph2020★ 10 cited

Modulation of heterogeneous surface charge and flow pattern in electrically gated converging-diverging nanochannel

Movaffaq Kateb, Mohammadreza Kolahdouz, Morteza Fathipour

The present study aims at utilizing field effect phenomenon to induce heterogeneous surface charge and consequently changing the fluid flow in a solid state nanochannel with conver…

physics.app-ph2019★ 23 cited

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1

In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…

cond-mat.mes-hall2016

N-P-N Bipolar Action in Junctionless Nanowire TFET: Physical Operation of a Modified Current Mechanism for Low Power Applications

Morteza Rahimiana, Morteza Fathipour

In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In…