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physics.app-ph2020★ 30 cited
Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
Xiang Li, Shy-Jay Lin, Mahendra DC +5
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is c…
physics.app-ph2019★ 2 cited
Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling
Delin Zhang, Mukund Bapna, Wei Jiang +10
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-contro…