activity
20192021
most citedMaterials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

30 citations · 60 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2021★ 12 cited

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Hai Li, Dmitri E. Nikonov, Chia-Ching Lin +5

Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a ri…

physics.app-ph2020★ 30 cited

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

Xiang Li, Shy-Jay Lin, Mahendra DC +5

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is c…

cond-mat.mtrl-sci2020★ 1 cited

A micromagnetic study of the switching dynamics of the BiFeO/CoFe heterojunction

Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta +4

The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental r…

physics.app-ph2019★ 2 cited

Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling

Delin Zhang, Mukund Bapna, Wei Jiang +10

Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-contro…

cond-mat.mes-hall2019★ 15 cited

Simulation of the Magnetization Dynamics of a Single Domain BiFeO Thin Film

Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta +4

The switching dynamics of a single-domain BiFeO thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric po…