Nidhin Kurian Kalarickal

activity

20202026

most cited

β

-Ga

_{2}

_{3}

Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

30 citations · 30 across the 7 of their papers we have counts for

collaborators

Showing 2026 · physics.app-phShow all

2 papers · 2 filters

physics.app-ph2026

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $β - G a_{2} O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…

physics.app-ph2026

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

Md Abdul Hamid, Nabasindhu Das, Advait Gilankar +3

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited…

Sub-Micron Gate β−Ga2​O3​ FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$