activity
20122020
most citedNegative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

29 citations · 105 across the 11 of their papers we have counts for

collaborators
Showing 2018Show all

5 papers · 1 filter

cond-mat.mes-hall2018★ 28 cited

A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor

Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed +2

In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation f…

physics.comp-ph2018★ 8 cited

Electronic Properties of MoS2/MX2/MoS2 Trilayer Heterostructures: A First Principle Study

Kanak Datta, Quazi D. M. Khosru

In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigat…

physics.comp-ph2018★ 24 cited

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

Kanak Datta, Abir Shadman, Ehsanur Rahman +1

Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation…

physics.comp-ph2018★ 7 cited

Simulation of Thin-TFETs Using Transition Metal Dichalcogenides: Effect of Material Parameters, Gate Dielectric on Electrostatic Device Performance

Kanak Datta, Quazi D. M. Khosru

In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials li…

physics.comp-ph2018★ 4 cited

III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond

Kanak Datta, Quazi D. M. Khosru

In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold an…