29 citations · 105 across the 11 of their papers we have counts for
11 papers
An Accurate Current Model for III-V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient
Ehsanur Rahman, Abir Shadman, Sudipta Romen Biswas +2
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective mo…
A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor
Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed +2
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation f…
Electronic Properties of MoS2/MX2/MoS2 Trilayer Heterostructures: A First Principle Study
Kanak Datta, Quazi D. M. Khosru
In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigat…
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
Kanak Datta, Abir Shadman, Ehsanur Rahman +1
Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation…
Simulation of Thin-TFETs Using Transition Metal Dichalcogenides: Effect of Material Parameters, Gate Dielectric on Electrostatic Device Performance
Kanak Datta, Quazi D. M. Khosru
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials li…
III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond
Kanak Datta, Quazi D. M. Khosru
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold an…
Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor
Saeed Uz Zaman Khan, Md. Shafayat Hossain, Md. Obaidul Hossen +3
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around gra…
Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current
Nadim Chowdhury, S. M. Farhaduzzaman Azad, Quazi D. M. Khosru
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Nega…
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim +3
We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum w…
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed +3
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold V…
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed +3
In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consisten…