activity
20182020
most citedTopological Hall effect in single thick SrRuO3 layers induced by defect engineering

35 citations · 73 across the 4 of their papers we have counts for

collaborators

8 papers

physics.app-ph20204 cited

Enhanced Stability of Antiferromagnetic Skyrmion during Its Motion by Anisotropic Dzyaloshinskii Moriya Interaction

Zongpeng Huang, Zhejunyu Jin, Xiaomiao Zhang +7

Searching for new methods to enhance the stability of antiferromagnetic (AFM) skyrmion during its motion is an important issue for AFM spintronic devices. Herein, the spin polarize…

cond-mat.mtrl-sci202035 cited

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

Changan Wang, Ching-Hao Chang, Andreas Herklotz +11

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmet…

cond-mat.mtrl-sci2019

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

Anna N. Morozovska, Eugene A. Eliseev, Deyang Chen +3

The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning…

physics.app-ph2019

Ultralow-loss domain wall motion driven by magnetocrystalline anisotropy gradient in antiferromagnetic nanowire

D. L. Wen, Z. Y. Chen, W. H. Li +7

Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretica…

cond-mat.mtrl-sci2019

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Changan Wang, Hongbin Zhang, Kumar Deepak +12

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transit…

cond-mat.mtrl-sci2019

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Cong Liu, Feng An, Paria S. M. Gharavi +21

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here…