117 citations · 216 across the 11 of their papers we have counts for
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Temperature Dependent Low-Frequency Noise Characteristics of NiO/GaO p-n Heterojunction Diodes
Subhajit Ghosh, Dinusha Herath Mudiyanselage, Fariborz Kargar +3
We report on the temperature dependence of the low-frequency electronic noise in NiO/GaO p-n heterojunction diodes. The noise spectral density is of the 1/f-type near r…
Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
Abhijit Biswas, Gustavo A. Alvarez, Tao Li +19
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. Howeve…
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Abhijit Biswas, Mingfei Xu, Kai Fu +18
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…
A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN
Jossue Montes, Chen Yang, Houqiang Fu +6
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanica…
Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide
Hong Chen, Houqiang Fu, Xuanqi Huang +4
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3…