117 citations · 216 across the 11 of their papers we have counts for
11 papers
Temperature Dependent Low-Frequency Noise Characteristics of NiO/GaO p-n Heterojunction Diodes
Subhajit Ghosh, Dinusha Herath Mudiyanselage, Fariborz Kargar +3
We report on the temperature dependence of the low-frequency electronic noise in NiO/GaO p-n heterojunction diodes. The noise spectral density is of the 1/f-type near r…
Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
Abhijit Biswas, Gustavo A. Alvarez, Tao Li +19
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. Howeve…
Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes
Subhajit Ghosh, Dinusha Herath Mudiyanselage, Sergey Rumyantsev +5
We report on the low-frequency electronic noise in (AlGa)O Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the fli…
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Abhijit Biswas, Rui Xu, Gustavo A. Alvarez +24
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are…
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Abhijit Biswas, Mingfei Xu, Kai Fu +18
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…
Nonlinear nanophotonic devices in the Ultraviolet to Visible wavelength range
Jinghan He, Hong Chen, Jin Hu +7
Although the first lasers invented operated in the visible, the first on-chip devices were optimized for near-infrared (IR) performance driven by demand in telecommunications. Howe…
Demonstration of beta-Ga2O3 Optical Waveguides and the Analysis of Their Propagation Losses in the UV-Visible Spectra
Jingan Zhou, Hong Chen, Houqiang Fu +10
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The pr…
On-chip directional octave-spanning supercontinuum generation from high order mode in near ultraviolet to infrared spectrum using AlN waveguides
Hong Chen, Jingan Zhou, Dongying Li +12
On-chip ultraviolet to infrared (UV-IR) spectrum frequency metrology is of crucial importance as a characterization tool for fundamental studies on quantum physics, chemistry, and…
A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN
Jossue Montes, Chen Yang, Houqiang Fu +6
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanica…
Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide
Hong Chen, Houqiang Fu, Xuanqi Huang +4
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3…
Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates
Houqiang Fu, Hong Chen, Xuanqi Huang +4
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution…