31 citations · 34 across the 3 of their papers we have counts for
4 papers
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
Jhang-Yan Ciou, Sourav De, Chien-Wei-Wang +3
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly r…
Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO Ferroelectric Memory by Thermal Engineering
Sourav De, Bo-Han Qiu, Md. Aftab Baig +2
In this paper we proclaim excellent variation control in HfZrO based ferroelectric films obtained by germination of large ferroelectric domain via extended dura…
Compact Device Models for FinFET and Beyond
Darsen D. Lu, Mohan V. Dunga, Ali M. Niknejad +6
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET a…
A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks
Darsen D. Lu, Sourav De, Mohammed Aftab Baig +2
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance an…