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physics.app-ph2020★ 1 cited
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
Jhang-Yan Ciou, Sourav De, Chien-Wei-Wang +3
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly r…
physics.app-ph2020★ 1 cited
Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO Ferroelectric Memory by Thermal Engineering
Sourav De, Bo-Han Qiu, Md. Aftab Baig +2
In this paper we proclaim excellent variation control in HfZrO based ferroelectric films obtained by germination of large ferroelectric domain via extended dura…