M. Baig

most citedFormation of Uniform Crystal and Reduction of Electrical Variation in HfZrO

_{2}

Ferroelectric Memory by Thermal Engineering

1 citations · 1 across the 1 of their papers we have counts for

collaborators

2 papers

physics.app-ph2020

Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Jhang-Yan Ciou, Sourav De, Chien-Wei-Wang +3

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly r…

physics.app-ph2020★ 1 cited

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO $_{2}$ Ferroelectric Memory by Thermal Engineering

Sourav De, Bo-Han Qiu, Md. Aftab Baig +2

In this paper we proclaim excellent variation control in Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ based ferroelectric films obtained by germination of large ferroelectric domain via extended dura…

Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO2​ Ferroelectric Memory by Thermal Engineering

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO $_{2}$ Ferroelectric Memory by Thermal Engineering