activity
20202023
most citedAlleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network

46 citations · 90 across the 8 of their papers we have counts for

collaborators

8 papers

cs.NE2023★ 1 cited

CIMulator: A Comprehensive Simulation Platform for Computing-In-Memory Circuit Macros with Low Bit-Width and Real Memory Materials

Hoang-Hiep Le, Md. Aftab Baig, Wei-Chen Hong +12

This paper presents a simulation platform, namely CIMulator, for quantifying the efficacy of various synaptic devices in neuromorphic accelerators for different neural network arch…

cs.ET2022★ 5 cited

A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory

Xunzhao Yin, Qingrong Huang, Franz Müller +8

In this work, we propose a ferroelectric FET(FeFET) time-domain compute-in-memory (TD-CiM) array as a homogeneous processing fabric for binary multiplication-accumulation (MAC) and…

cs.ET2021★ 3 cited

Neuromorphic Computing with Ferroelectric FinFETs in the Presence of Temperature, Process Variation, Device Aging and Flicker Noise

Sourav De, Bo-Han Qiu, Wei-Xuan Bu +4

This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroe…

cs.LG2021★ 46 cited

Alleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network

Sourav De, Hoang-Hiep Le, Md. Aftab Baig +3

This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniqu…

cs.LG2020★ 2 cited

Extreme Memorization via Scale of Initialization

Harsh Mehta, Ashok Cutkosky, Behnam Neyshabur

We construct an experimental setup in which changing the scale of initialization strongly impacts the implicit regularization induced by SGD, interpolating from good generalization…

physics.app-ph2020★ 1 cited

Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Jhang-Yan Ciou, Sourav De, Chien-Wei-Wang +3

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly r…