43 citations · 82 across the 7 of their papers we have counts for
3 papers · 1 filter
Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories
Mohamed Belmoubarik, Muftah Al-Mahdawi, George Machado +4
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage.…
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Hiroaki Sukegawa, Yushi Kato, Mohamed Belmoubarik +9
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 1…
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited /Fe(001) magnetic tunnel junctions
Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo +2
We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe//Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent trans…