43 citations · 82 across the 7 of their papers we have counts for
7 papers
Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories
Mohamed Belmoubarik, Muftah Al-Mahdawi, George Machado +4
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage.…
Quantum-well tunneling anisotropic magnetoresistance above room temperature
Muftah Al-Mahdawi, Qingyi Xiang, Yoshio Miura +5
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). I…
Graphene in the fight against malaria
Amine El Moutaouakil, Mohamed Belmoubarik, Weng Kung Peng
Malaria infection is a major public health worldwide, with millions of new cases and creating huge direct (an indirect) economic losses annually. Thus, the availability of preventi…
Review: Graphene-based biosensor for Viral Detection
Amine El Moutaouakil, Suhada Poovathy, Mohamed Belmoubarik +1
Viral infections are among the main reasons for serious pandemics and contagious infections; hence, they cause thousands of fatalities and economic losses annually. In the case of…
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
Muftah Al-Mahdawi, Mohamed Belmoubarik, Masao Obata +5
The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolat…
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Hiroaki Sukegawa, Yushi Kato, Mohamed Belmoubarik +9
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 1…
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited /Fe(001) magnetic tunnel junctions
Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo +2
We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe//Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent trans…