77 citations · 147 across the 5 of their papers we have counts for
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cond-mat.mes-hall2022★ 2 cited
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque +4
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a s…
cond-mat.mes-hall2021★ 23 cited
Graphene FET on diamond for high-frequency electronics
Muhammad Asad, Saman Majdi, Andrei Vorobiev +3
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene…