77 citations · 147 across the 5 of their papers we have counts for
5 papers
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque +4
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a s…
Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes
Andreas Hemmetter, Xinxin Yang, Zhenxing Wang +8
Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a…
Graphene FET on diamond for high-frequency electronics
Muhammad Asad, Saman Majdi, Andrei Vorobiev +3
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene…
Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies
Leonardo Viti, Alisson R. Cadore, Xinxin Yang +7
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications suc…
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…