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-phase Inclusions as Common Defects in Alloyed -(AlGa)O and Doped -GaO Films
Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko +5
-GaO is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission el…
Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +15
This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per…
N-polar GaN/AlN resonant tunneling diodes
YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…
An unexplored MBE growth mode reveals new properties of superconducting NbN
John Wright, Celesta Chang, Dacen Waters +8
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the te…