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20142026
most citedElectronic bulk and domain wall properties in B-site doped hexagonal ErMnO

47 citations · 123 across the 10 of their papers we have counts for

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cond-mat.mtrl-sci2026

Correlation Between Dopant Atom Evaporation Field and Measured Site Preference in Atom Probe Tomography

Kasper A. Hunnestad, Constantinos Hatzoglou, Frida H. Danmo +6

Complex oxides possess a wide range of electric, magnetic, and optical properties that can be precisely tuned by chemical doping. The atomic-scale analysis of the property-controll…

cond-mat.mtrl-sci2024★ 4 cited

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

L. Zhou, L. Puntigam, P. Lunkenheimer +7

A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the materia…

cond-mat.mtrl-sci2023

Non-destructive tomographic nanoscale imaging of ferroelectric domain walls

Jiali He, Manuel Zahn, Ivan N. Ushakov +8

Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroic…

cond-mat.mtrl-sci2023

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Ursula Ludacka, Jiali He, Shuyu Qin +9

Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials…

cond-mat.mtrl-sci2023

Pressure-control of non-ferroelastic ferroelectric domains in ErMnO3

O. W. Sandvik, A. M. Müller, H. W. Ånes +7

Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established examp…

cond-mat.mtrl-sci2023

Optimizing compositional and atomic-level information of oxides in atom probe tomography

Kasper Hunnestad, Constantinos Hatzoglou, Francois Vurpillot +5

Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing…

cond-mat.mtrl-sci2022★ 1 cited

Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

K. A. Hunnestad, J. Schultheiß, A. C. Mathisen +4

Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied i…

cond-mat.mtrl-sci2022

The third dimension of ferroelectric domain walls

Erik D. Roede, Konstantin Shapovalov, Thomas J. Moran +7

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small…

cond-mat.mtrl-sci2021★ 14 cited

Charged ferroelectric domain walls for deterministic a.c. signal control

J. Schultheiß, E. Lysne, L. Puntigam +5

The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge stat…

cond-mat.mtrl-sci2020

Controlling local resistance via electric-field induced dislocations

D. M. Evans, D. R. Småbråten, T. S. Holstad +7

Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matt…

cond-mat.mtrl-sci2020★ 6 cited

Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

J. Schaab, K. Shapovalov, P. Schoenherr +10

Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining…

cond-mat.mtrl-sci2017★ 47 cited

Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO

T. S. Holstad, D. M. Evans, A. Ruff +8

Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more…

cond-mat.mtrl-sci2014★ 29 cited

Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy

J. Schaab, I. P. Krug, F. Nickel +9

High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application…