5 papers
A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
Giovanni Nastasi, Vittorio Romano
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom…
Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
Houssem Rezgui, Giovanni Nastasi, Manuel Marcoux +1
The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future…
Ballistic electron transport described by a fourth-order Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
A fourth-order Schrödinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in the…
Continuous-time stochastic processes for the spread of COVID-19 disease simulated via a Monte Carlo approach and comparison with deterministic models
Fabiana Calleri, Giovanni Nastasi, Vittorio Romano
Two stochastic models are proposed to describe the evolution of the COVID-19 pandemic. In the first model the population is partitioned into four compartments: susceptible , inf…
Mathematical modelling of charge transport in graphene heterojunctions
Luigi Barletti, Giovanni Nastasi, Claudia Negulescu +1
A typical graphene heterojunction device can be divided into two classical zones, where the transport is basically diffusive, separated by a "quantum active region" (e.g., a locall…