19 citations · 54 across the 6 of their papers we have counts for
Showing 2020Show all
3 papers · 1 filter
cond-mat.mtrl-sci2020★ 19 cited
Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide
Bowen Li, Min Hu, Hui Ren +5
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crysta…
physics.app-ph2020
Visualizing an adjustable WO3/p-GaN heterojunction
Yuliang Chen, Changlong Hu, Guobin Zhang +1
The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n juncti…
physics.app-ph2020★ 7 cited
Spatially-resolved insulator-metal transition for rewritable optical gratings
Yuliang Chen, Changlong Hu, Liyan Xie +7
Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology…