19 citations · 54 across the 6 of their papers we have counts for
6 papers
Ultrahigh ion diffusion in oxide crystal by engineering the interfacial transporter channels
Liang Li, Min Hu, Changlong Hu +6
The mass storage and removal in solid conductors always played vital role on the technological applications such as modern batteries, permeation membranes and neuronal computations…
Manipulating the anisotropic phase separation in strained VO2 epitaxial films by nanoscale ion-implantation
Changlong Hu, Liang Li, Xiaolei Wen +5
Manipulating the strain induced poly-domains and phase transition in correlated oxide material are important for high performance devices fabrication. Though the electronic transpo…
Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide
Bowen Li, Min Hu, Hui Ren +5
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crysta…
Visualizing an adjustable WO3/p-GaN heterojunction
Yuliang Chen, Changlong Hu, Guobin Zhang +1
The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n juncti…
Spatially-resolved insulator-metal transition for rewritable optical gratings
Yuliang Chen, Changlong Hu, Liyan Xie +7
Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology…
Wafer-size VO2 film prepared by water-vapor oxidant
H. Ren, B. Li, X. Zhou +7
The growth of wafer-scale and uniform monoclinic VO2 film was a challenge if considering the multivalent vanadium atom and the various phase structures of VO2 compound. Directly ox…