4 citations · 7 across the 3 of their papers we have counts for
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physics.app-ph2021★ 4 cited
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
physics.app-ph2020
Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques
Min Wang, Zhaohao Wang, Chao Wang +1
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field…