39 citations · 51 across the 7 of their papers we have counts for
7 papers
Reconfigurable Physical Unclonable Function based on SOT-MRAM Chips
Min Wang, Chuanpeng Jiang, Zhaohao Wang +5
Hardware-based security primitives have become critical to enhancing information security in the Internet of Things (IoT) era. Physical unclonable functions (PUFs) utilize the inhe…
NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications
Min Wang, Zhengyi Hou, Chenyi Wang +13
We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 leve…
Threshold Current for Field-free Switching of the In-plane Magnetization in the Three-terminal Magnetic Tunnel Junction
Hongjie Ye, Zhaohao Wang
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it…
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction
Min Wang, Zhaohao Wang, Xueying Zhang +1
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism…
Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques
Min Wang, Zhaohao Wang, Chao Wang +1
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field…