2 papers
cond-mat.mtrl-sci2020
Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be expl…
cond-mat.mtrl-sci2016
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
Dongwei Xu, Peter Zapol, G. Brian Stephenson +1
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high…