41 citations · 113 across the 9 of their papers we have counts for
9 papers
Burton-Cabrera-Frank theory for surfaces with alternating step types
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diff…
Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crysta…
Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be expl…
In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth
Guangxu Ju, Dongwei Xu, Carol Thompson +5
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different g…
Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays
Guangxu Ju, Dongwei Xu, Matthew J. Highland +7
Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) usin…
Characterization of the X-ray Coherence Properties of an Undulator Beamline at the Advanced Photon Source
Guangxu Ju, Matthew J. Highland, Carol Thompson +5
In anticipation of the increased use of coherent x-ray methods and the need to upgrade beamlines to match improved source quality, we have characterized the coherence properties of…
Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Edith Perret, Dongwei Xu, M. J. Highland +5
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase ep…
An instrument for advanced in situ x-ray studies of metal-organic vapor phase epitaxy of III-nitrides
Guangxu Ju, Matthew J. Highland, Angel Yanguas-Gil +6
We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE)…
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
Dongwei Xu, Peter Zapol, G. Brian Stephenson +1
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high…