From the 1 of 10 linked papers with an AI index.
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SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar TomiÄ, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…
Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits
Daniel Schroller, Daniel Sitter, Thomas Koch +12
Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc…
Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
Marc-Antoine Roux, Joffrey Rivard, Victor Yon +18
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the ident…