From the 1 of 8 linked papers with an AI index.
8 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device
Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…
Concatenated continuous driving of silicon qubit by amplitude and phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar TomiÄ, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…