4 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Arne Loenders, Jacques Van Damme, Clement Godfrin +19
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar TomiÄ, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
I. Fattal, J. Van Damme, B. Raes +14
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…