Cheng-Hsiang Hsu

activity

20192023

_{2}

-based ferroelectric tunnel junctions on silicon

5 citations · 14 across the 5 of their papers we have counts for

collaborators

Showing 2020Show all

2 papers · 1 filter

cond-mat.mtrl-sci2020★ 5 cited

One nanometer HfO $_{2}$ -based ferroelectric tunnel junctions on silicon

Suraj S. Cheema, Nirmaan Shanker, Cheng-Hsiang Hsu +4

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, fer…

cond-mat.mes-hall2020

Spin-orbit torque generated by amorphous Fe $_{x}$ Si $_{1 - x}$

Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky +5

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the…

One nanometer HfO2​-based ferroelectric tunnel junctions on silicon

Spin-orbit torque generated by amorphous Fex​Si1−x​

One nanometer HfO $_{2}$ -based ferroelectric tunnel junctions on silicon

Spin-orbit torque generated by amorphous Fe $_{x}$ Si $_{1 - x}$