activity
20192023
most citedOne nanometer HfO-based ferroelectric tunnel junctions on silicon

5 citations · 14 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2023★ 4 cited

Manipulating chiral-spin transport with ferroelectric polarization

Xiaoxi Huang, Xianzhe Chen, Yuhang Li +28

A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more t…

cond-mat.mes-hall2022

Topological Edge Conduction Induced by Strong Anisotropic Exchange Interactions

Shehrin Sayed, Pratik Brahma, Cheng-Hsiang Hsu +1

We predict that an interplay between isotropic and anisotropic exchange interactions in a honeycomb lattice structure can lead to topological edge conduction when the anisotropic i…

cond-mat.mtrl-sci2020★ 5 cited

One nanometer HfO-based ferroelectric tunnel junctions on silicon

Suraj S. Cheema, Nirmaan Shanker, Cheng-Hsiang Hsu +4

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, fer…

cond-mat.mes-hall2020

Spin-orbit torque generated by amorphous FeSi

Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky +5

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the…

cond-mat.mes-hall2019★ 5 cited

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

Shehrin Sayed, Cheng-Hsiang Hsu, Niklas Roschewsky +2

We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, whic…