5 citations · 5 across the 2 of their papers we have counts for
3 papers
One nanometer HfO-based ferroelectric tunnel junctions on silicon
Suraj S. Cheema, Nirmaan Shanker, Cheng-Hsiang Hsu +4
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, fer…
Spin-orbit torque generated by amorphous FeSi
Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky +5
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the…
Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching
Shehrin Sayed, Cheng-Hsiang Hsu, Niklas Roschewsky +2
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, whic…