164 citations · 171 across the 8 of their papers we have counts for
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Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth HydrogennImplantation
Nadine Denis, Akant Sharma, Elena Blundo +9
Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achiev…
Extremely high excitonic -factors in 2D crystals by alloy-induced admixing of band states
Katarzyna Olkowska-Pucko, Tomasz Woźniak, Elena Blundo +24
Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic (-) facto…
Giant light emission enhancement in strain-engineered InSe/MS (M=Mo,W) van der Waals heterostructures
Elena Blundo, Marzia Cuccu, Federico Tuzi +11
Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostru…
Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation
Elena Stellino, Beatrice D'Alò, Elena Blundo +2
We present a spectroscopic investigation into the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, d…
Localisation-to-delocalisation transition of moiré excitons in WSe/MoSe heterostructures
Elena Blundo, Federico Tuzi, Salvatore Cianci +12
Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, , for creati…
Variation of the fundamental band gap nature in curved two-dimensional WS2
E. Blundo, M. Felici, T. Yildirim +7
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of…