Junlei Zhao

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cond-mat.mtrl-sci2025

Edge-Dependent Step-Flow Growth Mechanism in $I^^{2}$ -Ga $_{2}$ O $_{3}$ (100) Facet at the Atomic Level

Qi Li, Junlei Zhao, Na Lin +5

Homoepitaxial step-flow growth of high-quality $I^^{2}$ -Ga $_{2}$ O $_{3}$ thin films is essential for the advancement of high-performance Ga $_{2}$ O $_{3}$ -based devices. In this work, the…

cond-mat.mtrl-sci2024

Orientation-dependent surface radiation damage in $I^^{2}$ -Ga2O3 explored by multiscale atomic simulations

Taiqiao Liu, Zeyuan Li, Junlei Zhao +7

Ultrawide bandgap semiconductor $I^^{2}$ -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is…

cond-mat.mtrl-sci2024

Large-scale atomistic study of plasticity in amorphous gallium oxide with a machine-learning potential

Jiahui Zhang, Junlei Zhao, Jesper ByggmÃ¤star +2

Compared to the widely investigated crystalline polymorphs of gallium oxide (Ga2O3), knowledge about its amorphous state is still limited. With the help of a machine-learning inter…

Edge-Dependent Step-Flow Growth Mechanism in I^2-Ga2​O3​ (100) Facet at the Atomic Level

Orientation-dependent surface radiation damage in I^2-Ga2O3 explored by multiscale atomic simulations

Large-scale atomistic study of plasticity in amorphous gallium oxide with a machine-learning potential

Edge-Dependent Step-Flow Growth Mechanism in $I^^{2}$ -Ga $_{2}$ O $_{3}$ (100) Facet at the Atomic Level

Orientation-dependent surface radiation damage in $I^^{2}$ -Ga2O3 explored by multiscale atomic simulations