Edge-Dependent Step-Flow Growth Mechanism in ${\hat{I}}^2$-Ga${}_2$O${}_3$ (100) Facet at the Atomic Level

Qi Li, Junlei Zhao, Na Lin +5

Homoepitaxial step-flow growth of high-quality ${\hat{I}}^2$-Ga${}_2$O${}_3$ thin films is essential for the advancement of high-performance Ga${}_2$O${}_3$-based devices. In this work, the…