128 citations · 295 across the 9 of their papers we have counts for
9 papers
Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN
F. Giannazzo, S. E. Panasci, E. Schilirò +11
The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…
Direct atomic layer deposition of ultra-thin and films on gold-supported monolayer
E. Schilirò, S. E. Panasci, A. M. Mio +9
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of and on Au-supported monolayer (1L) is investigated, providing an i…
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò +9
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscal…
Substrate impact on the thickness dependence of vibrational and optical properties of large area produced by gold-assisted exfoliation
S. E. Panasci, E. Schilirò, F. Migliore +5
The gold-assisted exfoliation is a very effective method to produce large-area (-scale) membranes of molybdenum disulfide () for electronics. However, the strong $MoS_…
Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate
Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E. Panasci +5
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 °C of highly homogeneous and ultra-thin ( 3.6 nm) films with excellent insu…
Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate
S. E. Panasci, E. Schilirò, G. Greco +5
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excelle…
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
F. Giannazzo, R. Dagher, E. Schilirò +8
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E. Schilirò, R. Lo Nigro, S. E. Panasci +5
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on…
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza +1
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on sili…