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Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…
Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system
Lars C. Bannow, Jörg Hader, Jerome V. Moloney +1
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscop…