activity
20192026
most citedWafer-scale nanofabrication of telecom single-photon emitters in silicon

93 citations · 445 across the 16 of their papers we have counts for

collaborators
Showing 2022Show all

5 papers · 1 filter

quant-ph2022★ 2 cited

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Roberto Rizzato, Martin Schalk, Stephan Mohr +10

Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In p…

cond-mat.mtrl-sci2022★ 26 cited

Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation

Yongjian Luo, Changan Wang, Chao Chen +19

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energ…

cond-mat.mes-hall2022★ 4 cited

Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities

Chenjiang Qian, Viviana Villafañe, Martin Schalk +6

Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in t…

quant-ph2022★ 93 cited

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M. Hollenbach, N. Klingner, N. S. Jagtap +9

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and…

cond-mat.mes-hall2022★ 57 cited

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Chenjiang Qian, Viviana Villafañe, Martin Schalk +11

Negatively charged boron vacancies () in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of ele…